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封面設計/論文配圖——Advanced Materials(20181223)


Volume 30, Issue 52

December 27, 2018

Photodoping: Nonvolatile and Programmable Photodoping in MoTe2 for Photoresist‐Free Complementary Electronic Devices (Adv. Mater. 52/2018)

Tao Liu Du Xiang Yue Zheng Yanan Wang Xinyun Wang Li Wang Jun He Lei Liu Wei Chen

1870402 First Published: 21 December 2018

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In article number 1804470, Du Xiang, Wei Chen, and coworkers report photoinduced nonvolatile and programmable doping in MoTe2 based on a heterostructure of MoTe2 and hBN. By spatially controlling the photodoping region, highperformance photoresistfree pn junctions and inverters in the MoTe2 homostructure are achieved, illustrating the great potential of applying this photodoping technique in 2D logic electronics.


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